Surface recombination measurements on III–V candidate materials for nanostructure light-emitting diodes

Surface recombination measurements on III–V candidate materials for nanostructure light-emitting diodes

Surface recombination is an important characteristic of an optoelectronic material. Although surface recombination is a limiting factor for very small devices it has not been studied intensively. We have investigated surface recombination velocity on the exposed surfaces of the AlGaN, InGaAs, and InGaAlP material systems by using absolute photoluminescence quantum efficiency measurements. Two o...

Polymer Light Emitting Diodes - a Review on Materials and Techniques

Polymer Light Emitting Diodes, the most promising name in the field of display technology has received tremendous attention from various research groups. Being an interdisciplinary area of research, there has been challenging experiments on material science, device physics and chemistry of this organic display. This review unveils the development of PLEDs from its inception, bringing out import...

Device Structures and Materials for Organic Light Emitting Diodes

Organic light emitting devices (OLEDs) are promising candidates for light-weight color flat panel displays. Different device structures with emission in the blue, green, and red spectral region are discussed with respect to their optical and electrical characteristics. Blue OLEDs based on OXD-8 as emitter molecule show quantum efficiencies of 0.9 % (2.2 cd/A, 0.6 lm/W), green emitting devices b...

Temperature-dependent recombination in polymer composite light-emitting diodes

We study the temperature dependence of the current–voltage and radiance–voltage curves in double-carrier injected polymer light-emitting devices comprised of poly~2-methoxy,5~28-ethyl-hexoxy!– p-phenylene vinylene) ~MEH–PPV! and MEH–PPV/SiO2 as the active layer. The quantum efficiency increases significantly as the temperature is decreased in agreement with an increase in the recombination effi...

Nanostructure engineering of staggered InGaN quantum wells light emitting diodes emitting at 420-510 nm